第7代“X系列”产业用RC-IGBT模块的系列化

2018-06-28 18:36:18 Westpac Electronics 384

第7代“X系列”产业用RC-IGBT模块的系列化

山野　彰生　・　高崎　爱子　・　市川　裕章

为满足IGBT模块小型化、低损耗化、高可靠性化的市场要求，富士电机开发了将IGBT和FWD单芯片化的RC-IGBT（逆导型IGBT），推进了额定电压1200V的第7 代“X系列”产业用RC-IGBT模块的系列化，并新开发了“Dual XT”。相比第6代“V系列”产业用IGBT模块“Dual XT”的最大额定电流600A，新产品将额定电流扩大到了1000A。而与采用相同封装的传统产品比较，大幅改善了实际运行时芯片的接合温度和接合温度上升的问题。有望实现电力转换装置输出的进一步提高和长寿命化。

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FUJI富士IGBT威柏德电子第7代“X系列”产业用RC-IGBT模块的系列化.pdf

In order to meet the market demand of the smaller size, lower power dissipation and higher reliability for IGBT modules, Fuji Electric has developed a reverse conduction insulated gate bipolar transistor (RC-IGBT) that integrates an IGBT and a FWD on a single chip. We have also developed the “Dual XT” to expand the line-up of the 7th-generation “X Series” RC-IGBT module for industrial applications that has a rated voltage of 1,200 V. While the “Dual XT” 6th-generation “V Series” IGBT module for industrial applications had a maximum rated current of 600 A, the new module has a expanded rated current of 1,000 A. Compared with the conventional product, which uses the same package, the new product greatly improves the junction temperature and junction temperature rise of the chip during actual operation. This module will contribute to further increase of the output and extension of service life of the power converters.

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